JPH0438140B2 - - Google Patents

Info

Publication number
JPH0438140B2
JPH0438140B2 JP59011225A JP1122584A JPH0438140B2 JP H0438140 B2 JPH0438140 B2 JP H0438140B2 JP 59011225 A JP59011225 A JP 59011225A JP 1122584 A JP1122584 A JP 1122584A JP H0438140 B2 JPH0438140 B2 JP H0438140B2
Authority
JP
Japan
Prior art keywords
silicon layer
polycrystalline silicon
layer
mis
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59011225A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60154548A (ja
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59011225A priority Critical patent/JPS60154548A/ja
Publication of JPS60154548A publication Critical patent/JPS60154548A/ja
Publication of JPH0438140B2 publication Critical patent/JPH0438140B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP59011225A 1984-01-24 1984-01-24 半導体装置の製造方法 Granted JPS60154548A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59011225A JPS60154548A (ja) 1984-01-24 1984-01-24 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59011225A JPS60154548A (ja) 1984-01-24 1984-01-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60154548A JPS60154548A (ja) 1985-08-14
JPH0438140B2 true JPH0438140B2 (en]) 1992-06-23

Family

ID=11772011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59011225A Granted JPS60154548A (ja) 1984-01-24 1984-01-24 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60154548A (en])

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2605286B2 (ja) * 1987-06-29 1997-04-30 ソニー株式会社 半導体装置の製造方法
JP3017860B2 (ja) * 1991-10-01 2000-03-13 株式会社東芝 半導体基体およびその製造方法とその半導体基体を用いた半導体装置
JP4611621B2 (ja) * 2003-06-20 2011-01-12 株式会社 日立ディスプレイズ 薄膜半導体装置とその製造方法
US20050116290A1 (en) * 2003-12-02 2005-06-02 De Souza Joel P. Planar substrate with selected semiconductor crystal orientations formed by localized amorphization and recrystallization of stacked template layers
US7235433B2 (en) * 2004-11-01 2007-06-26 Advanced Micro Devices, Inc. Silicon-on-insulator semiconductor device with silicon layers having different crystal orientations and method of forming the silicon-on-insulator semiconductor device
US7285473B2 (en) * 2005-01-07 2007-10-23 International Business Machines Corporation Method for fabricating low-defect-density changed orientation Si
US7291539B2 (en) 2005-06-01 2007-11-06 International Business Machines Corporation Amorphization/templated recrystallization method for hybrid orientation substrates

Also Published As

Publication number Publication date
JPS60154548A (ja) 1985-08-14

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